| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N5239B | 9.1 V, 20 mA zener diode | distributor | - | 2 | - | - | 94 K |
| 1N5239B | 9.1 V, 20 mA, zener diode | distributor | DO | 2 | - | - | 47 K |
| 1N5239B | 500 milliwatts glass silicon zener diode, zener voltage 9.1V | Motorola | - | 2 | -65°C | 200°C | 424 K |
| 1N5239C | 9.1 V, 20 mA, zener diode | distributor | DO | 2 | - | - | 47 K |
| 2SD2395 | Power transistor, 50V, 3A | ROHM | - | 3 | -55°C | 150°C | 37 K |
| 2SD2396 | Low frequency NPN transistor, 60V, 3A | ROHM | - | 3 | -55°C | 150°C | 41 K |
| CHA2391-99F/00 | 36-40GHz very low noise amplifier | distributor | Chip | - | -40°C | 85°C | 104 K |
| CHA2394-99F/00 | 36-40GHz very low noise high gain amplifier | distributor | Chip | - | -40°C | 85°C | 102 K |
| CHA2395-99F/00 | 36-40GHz low noise very high gain amplifier | distributor | Chip | - | -40°C | 85°C | 87 K |
| MMBZ5239B | Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 9.1 V. Test current 20.0 mA. | distributor | - | 3 | - | - | 21 K |
| << [11] [12] [13] [14] [15] 16 [17] [18] [19] [20] [21] >> |
|---|
