| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BD241A | 4mW NPN silicon epitaxial base power transistor | distributor | - | 3 | -55°C | 150°C | 97 K |
| BD241B | 4mW NPN silicon epitaxial base power transistor | distributor | - | 3 | -55°C | 150°C | 97 K |
| CMBZ5241B | 5% surface mount zener diode. Zener voltage Vz = 11V at Iz = 20mA. | distributor | - | 3 | -55°C | 125°C | 21 K |
| DK2414FCM | 1400V fast switching thyristor | distributor | TO93 | 2 | - | - | 304 K |
| DK2416FCK | 1600V fast switching thyristor | distributor | TO93 | 2 | - | - | 304 K |
| DK2416FCM | 1600V fast switching thyristor | distributor | TO93 | 2 | - | - | 304 K |
| DK2418FCK | 1800V fast switching thyristor | distributor | TO93 | 2 | - | - | 304 K |
| DK2418FCM | 1800V fast switching thyristor | distributor | TO93 | 2 | - | - | 304 K |
| ZMM5241B | 5% zener diode. Power dissipation 500 mW. Zener voltage Vz=11V at Izt=20mA. | distributor | - | - | -65°C | 200°C | 23 K |
| ZMM5241B | 5% zener diode. Power dissipation 500 mW. Zener voltage Vz=11V at Izt=20mA. | distributor | - | - | -65°C | 200°C | 23 K |
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