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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
HM624100HCJP-104M High speed SRAM (1-Mword x 4-bit)distributorplastic SOJ320°C70°C65 K
HM624100HCLJP-104M High speed SRAM (1-Mword x 4-bit)distributorplastic SOJ320°C70°C65 K
HM624100HJP-104M high speed SRAM (1-Mword x 4-bit), 10ns access timedistributorplastic SOJ320°C70°C74 K
HM624100HJP-124M high speed SRAM (1-Mword x 4-bit), 12ns access timedistributorplastic SOJ320°C70°C74 K
HN58X24128FPITwo-wire serial interfase 128k EEPROM (16-kword x 8-bit), operating voltage 1.8V to 5.5V, 400kHzdistributorplastic SOP8-40°C85°C69 K
HN58X24128TITwo-wire serial interfase 128k EEPROM (16-kword x 8-bit), operating voltage 1.8V to 5.5V, 400kHzdistributorplastic TSSOP14-40°C85°C69 K
HN58X2416FPITwo-wire serial interface 16k bit (2048 x 8-bit), operating voltage 1.8V to 5.5V, 400kHzdistributorplastic SOP8-40°C85°C71 K
HN58X2416TITwo-wire serial interface 16k bit (2048 x 8-bit), operating voltage 1.8V to 5.5V, 400kHzdistributorplastic TSSOP8-40°C85°C71 K
PRN111241001JBussed resistor networkCalifornia-Micro-DevicesQSOP160°C70°C51 K
PRN111241101JBussed resistor networkCalifornia-Micro-DevicesQSOP160°C70°C51 K
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