| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| PD40-24LC | 40 W DC/DC open frame/case with 10-30 V input, 5/15 V/3/2 A output | distributor | - | 6 | 0°C | 70°C | 84 K |
| PD65P24LA | 65 W DC/DC open frame/case with 10-30 V input, 5/15 V/6/3 A output | distributor | - | 8 | 0°C | 70°C | 78 K |
| PDM41024LA10T | 1Megabit static RAM 128K x 8-bit | distributor | TSOP | 32 | 0°C | 70°C | 301 K |
| UT611024LS-10 | Access time: 10 ns, 128 K x 8 Bit high speed CMOS SRAM | distributor | STSOP | 32 | 0°C | 70°C | 138 K |
| UT611024LS-12 | Access time: 12 ns, 128 K x 8 Bit high speed CMOS SRAM | distributor | STSOP | 32 | 0°C | 70°C | 138 K |
| UT611024LS-15 | Access time: 15 ns, 128 K x 8 Bit high speed CMOS SRAM | distributor | STSOP | 32 | 0°C | 70°C | 138 K |
| VN2224LL | 60V N-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 433 K |
| VTE3324LA | GaAs infrared emitting diode. Irradiance(typ) 2.6 mW/cm2 (distance 10.16 mm, diameter 2.1 mm). | distributor | - | 2 | -40°C | 100°C | 22 K |
| VTT3324LA | .025 inche NPN phototransistor. Light current(min) 4.0 mA at H = 20 fc, Vce = 5.0 V. | distributor | - | 2 | -40°C | 100°C | 22 K |
| VTT3424LA | .025 inche NPN phototransistor. Light current(min) 2.0 mA at H = 20 fc, Vce = 5.0 V. | distributor | - | 2 | -40°C | 100°C | 22 K |
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