| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| KIA6259P | Low noise dual pre-amplifier for consumer applications | Korea-Electronics-Co--Ltd- | - | 8 | -25°C | 75°C | 93 K |
| KIA6259S | Low noise dual pre-amplifier for consumer applications | Korea-Electronics-Co--Ltd- | - | 9 | -25°C | 75°C | 93 K |
| KIA8251AH | Max power 30W BTL x 4ch audio power amplifier | Korea-Electronics-Co--Ltd- | - | 25 | -40°C | 85°C | 249 K |
| KIA8252H | Max power 37W quad BTL audio power amplifier | Korea-Electronics-Co--Ltd- | - | 25 | -40°C | 85°C | 163 K |
| KIA8252H | Max power 37W quad BTL audio power amplifier | Korea-Electronics-Co--Ltd- | - | 25 | -40°C | 85°C | 163 K |
| KIA8256H | 3 channel audio power amplifier | Korea-Electronics-Co--Ltd- | - | 12 | -20°C | 75°C | 153 K |
| KIA8259H | Max power 37W quad BTL audio power amplifier | Korea-Electronics-Co--Ltd- | - | 25 | -40°C | 85°C | 163 K |
| MGY25N120 | Insulated Gate Bipolar Transistor N-Channel | ON-Semiconductor | - | 3 | - | - | 153 K |
| MGY25N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel | ON-Semiconductor | - | 3 | - | - | 171 K |
| MJ2501 | Medium-Power Complementary Silicon Transistors | ON-Semiconductor | - | 2 | - | - | 98 K |
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