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| Example: max232 |
| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|---|---|---|---|---|---|---|
| BAS125-04 | Silicon low leakage diode | Infineon-formely-Siemens | - | 3 | - | - | 104 K |
| BAS125-05 | Silicon low leakage diode | Infineon-formely-Siemens | - | 3 | - | - | 104 K |
| HYB514256B-50 | 256K x 4bit DRAM | Infineon-formely-Siemens | - | 20 | 0°C | 70°C | 215 K |
| HYB514256B-60 | 256K x 4bit DRAM | Infineon-formely-Siemens | - | 20 | 0°C | 70°C | 215 K |
| HYB514256B-70 | 256K x 4bit DRAM | Infineon-formely-Siemens | - | 20 | 0°C | 70°C | 215 K |
| HYB514256BJL-60 | 256K x 4bit DRAM | Infineon-formely-Siemens | - | 26 | 0°C | 70°C | 215 K |
| HYB514256BJL-70 | 256K x 4bit DRAM | Infineon-formely-Siemens | - | 26 | 0°C | 70°C | 215 K |
| HYB514256BL-50 | 256K x 4bit DRAM | Infineon-formely-Siemens | - | 20 | 0°C | 70°C | 215 K |
| HYB514256BL-60 | 256K x 4bit DRAM | Infineon-formely-Siemens | - | 20 | 0°C | 70°C | 215 K |
| HYB514256BL-70 | 256K x 4bit DRAM | Infineon-formely-Siemens | - | 20 | 0°C | 70°C | 215 K |
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