| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| DS2506S | 64 kbit Add-Only Memory | Dallas-Semiconductor | SOIC | 8 | -40°C | 85°C | 558 K |
| TISP2125F3D | Symmetrical Overvoltage TISP for 3 Wire Battery Backed Ringer Protection | Power-Innovations | D | - | - | - | 600 K |
| TISP2125F3DR | Symmetrical Overvoltage TISP for 3 Wire Battery Backed Ringer Protection | Power-Innovations | DR | - | - | - | 600 K |
| TISP2125F3P | Symmetrical Overvoltage TISP for 3 Wire Battery Backed Ringer Protection | Power-Innovations | P | - | - | - | 600 K |
| TISP2125F3SL | Symmetrical Overvoltage TISP for 3 Wire Battery Backed Ringer Protection | Power-Innovations | SL | - | - | - | 600 K |
| TISP3125F3D | Dual Symmetrical Overvoltage TISP for 3 Wire Ground Backed Ringer Protection | Power-Innovations | D | - | - | - | 451 K |
| TISP3125F3DR | Dual Symmetrical Overvoltage TISP for 3 Wire Ground Backed Ringer Protection | Power-Innovations | DR | - | - | - | 451 K |
| TISP3125F3P | Dual Symmetrical Overvoltage TISP for 3 Wire Ground Backed Ringer Protection | Power-Innovations | P | - | - | - | 451 K |
| TISP3125F3SL | Dual Symmetrical Overvoltage TISP for 3 Wire Ground Backed Ringer Protection | Power-Innovations | SL | - | - | - | 451 K |
| TISP3250H3SL | Dual Symmetrical Overvoltage TISP for 3 Wire Ground Backed Ringer Protection | Power-Innovations | SL | - | - | - | 231 K |
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