| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1MBH25-120 | Fuji discrete package IGBT | distributor | - | 3 | - | - | 169 K |
| AS7C1025-12TC | 5V 128K x 8 CM0S SRAM (revolutionary pinout), 12ns access time | Alliance-Semiconductor-Corporation | TSOPII | 32 | 0°C | 70°C | 196 K |
| AS7C1025-12TI | 5V 128K x 8 CM0S SRAM (revolutionary pinout), 12ns access time | Alliance-Semiconductor-Corporation | TSOPII | 32 | -40°C | 85°C | 196 K |
| AS7C1025-12TJC | 5V 128K x 8 CM0S SRAM (revolutionary pinout), 12ns access time | Alliance-Semiconductor-Corporation | SOJ | 32 | 0°C | 70°C | 196 K |
| AS7C31025-12TC | 3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 12ns access time | Alliance-Semiconductor-Corporation | TSOPII | 32 | 0°C | 70°C | 196 K |
| AS7C31025-12TI | 3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 12ns access time | Alliance-Semiconductor-Corporation | TSOPII | 32 | -40°C | 85°C | 196 K |
| DB25-12 | 3-phase Si bridge rectifier | Diotec-Elektronische | - | 5 | -50°C | 150°C | 63 K |
| DBI25-12 | 3-phase Si bridge rectifier | Diotec-Elektronische | - | 5 | -50°C | 150°C | 54 K |
| VHB25-12F | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 17 K |
| VHB25-12S | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 16 K |
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