Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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BS250F | P-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 80 K |
BS250F | P-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 80 K |
BS250P | P-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | - | 3 | -55°C | 150°C | 48 K |
BS250P | P-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | - | 3 | -55°C | 150°C | 48 K |
IRFP250N | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.075 Ohm, ID = 30A | International-Rectifier | - | 3 | -55°C | 175°C | 122 K |
P4KE250A | GPP transient voltage suppressor. Breakdown voltage 237V to 263V. 400W peak power, 1.0W steady state. For bidirectional use CA suffix. | distributor | - | 2 | -65°C | 175°C | 1 M |
P6FMBJ250A | GPP transient voltage suppressor. Breakdown voltage 237V to 263V. 600W peak power, 1.0W steady stat. For bidirectional use CA suffix | distributor | - | 2 | -55°C | 150°C | 1 M |
P6KE250A | GPP transient voltage suppressor. Breakdown voltage 237V to 263V. 600W peak power, 1.0W steady state. For bidirectional use CA suffix. | distributor | - | 2 | -65°C | 175°C | 1 M |
ZXCL250E5 | 2.5 V, Ultra small micropower low dropout regulator | Zetex-Semiconductor | SOT | 5 | -40°C | 85°C | 374 K |
ZXCL250E5 | 2.5 V, Ultra small micropower low dropout regulator | Zetex-Semiconductor | SOT | 5 | -40°C | 85°C | 374 K |
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