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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
BS250FP-channel enhancement mode vertical DMOS FETZetex-SemiconductorSOT3-55°C150°C80 K
BS250FP-channel enhancement mode vertical DMOS FETZetex-SemiconductorSOT3-55°C150°C80 K
BS250PP-channel enhancement mode vertical DMOS FETZetex-Semiconductor-3-55°C150°C48 K
BS250PP-channel enhancement mode vertical DMOS FETZetex-Semiconductor-3-55°C150°C48 K
IRFP250NHEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.075 Ohm, ID = 30AInternational-Rectifier-3-55°C175°C122 K
P4KE250AGPP transient voltage suppressor. Breakdown voltage 237V to 263V. 400W peak power, 1.0W steady state. For bidirectional use CA suffix.distributor-2-65°C175°C1 M
P6FMBJ250AGPP transient voltage suppressor. Breakdown voltage 237V to 263V. 600W peak power, 1.0W steady stat. For bidirectional use CA suffixdistributor-2-55°C150°C1 M
P6KE250AGPP transient voltage suppressor. Breakdown voltage 237V to 263V. 600W peak power, 1.0W steady state. For bidirectional use CA suffix.distributor-2-65°C175°C1 M
ZXCL250E52.5 V, Ultra small micropower low dropout regulatorZetex-SemiconductorSOT5-40°C85°C374 K
ZXCL250E52.5 V, Ultra small micropower low dropout regulatorZetex-SemiconductorSOT5-40°C85°C374 K
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