| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CM2501 | High current silicon bridge rectifier. Max recurrent peak reverse voltage 100V. Max average forward current for resistive load 25A. Non-repetive peak forward surge current at rated load 300A. | distributor | - | 4 | -55°C | 150°C | 65 K |
| CM2501 | High current silicon bridge rectifier. Max recurrent peak reverse voltage 100V. Max average forward current for resistive load 25A. Non-repetive peak forward surge current at rated load 300A. | distributor | - | 4 | -55°C | 150°C | 65 K |
| CP2501 | High current silicon bridge rectifier. Max recurrent peak reverse voltage 100V. Max average forward current for resistive load at Tc=55degC 25A. | distributor | - | 4 | -55°C | 150°C | 68 K |
| CP2501 | High current silicon bridge rectifier. Max recurrent peak reverse voltage 100V. Max average forward current for resistive load at Tc=55degC 25A. | distributor | - | 4 | -55°C | 150°C | 68 K |
| GBPC2501W | High current silicon bridge rectifier. Max recurrent peak reverse voltage 100 V. Max average forward current for resistive load at Tc=55degC 25 A. | distributor | - | 4 | -50°C | 150°C | 40 K |
| GL2501 | In-line high current silicon bridge rectifier. Max recurrent peak reverse voltage 100 V. Max average forward current for resistive load at Tc=55degC 25 A. | distributor | GL | 4 | -50°C | 150°C | 46 K |
| RBV2501D | 100 V, 25 A, silicon bridge rectifier | distributor | RBV25 | 4 | -40°C | 150°C | 19 K |
| TC54VC2501ECTTR | Voltage detector, CMOS output, 2.5V, +/-1% | Microchip-Technology-Inc- | - | 5 | -40°C | 85°C | 215 K |
| TC54VN2501ECTTR | Voltage detector, Nch open drain, 2.5V, +/-1% | Microchip-Technology-Inc- | - | 5 | -40°C | 85°C | 215 K |
| TC54VN2501ECTTR | Voltage detector, Nch open drain, 2.5V, +/-1% | Microchip-Technology-Inc- | - | 5 | -40°C | 85°C | 215 K |
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