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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
CY7C1316V18-250BZC18-Mb DDR-II SRAM two-word burst architecture, 250MHzCypress-SemiconductorFBGA1650°C70°C442 K
CY7C1318V18-250BZC18-Mb DDR-II SRAM two-word burst architecture, 250MHzCypress-SemiconductorFBGA1650°C70°C442 K
CY7C1320V18-250BZC18-Mb DDR-II SRAM two-word burst architecture, 250MHzCypress-SemiconductorFBGA1650°C70°C442 K
IRFP250B200V N-Channel MOSFETFairchild-Semiconductor----669 K
IRFS250B200V N-Channel MOSFETFairchild-Semiconductor----654 K
PMBZ5250BVoltage regulator diode.Philips-SemiconductorsSOT2330°C150°C97 K
PMBZ5250BVoltage regulator diode.Philips-SemiconductorsSOT2330°C150°C97 K
WEDPND16M72S-250BC250MHz; 2.5V power supply; 16M x 72 DDR SDRAMdistributorPBGA2190°C70°C442 K
WEDPND16M72S-250BC250MHz; 2.5V power supply; 16M x 72 DDR SDRAMdistributorPBGA2190°C70°C442 K
WEDPND16M72S-250BI250MHz; 2.5V power supply; 16M x 72 DDR SDRAMdistributorPBGA219-40°C85°C442 K
WEDPND16M72S-250BM250MHz; 2.5V power supply; 16M x 72 DDR SDRAMdistributorPBGA219-55°C125°C442 K
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