Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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EDS2516ACTA-75 | 256M; 133MHz SDRAM | distributor | TSOP | 54 | 0°C | 70°C | 559 K |
EDS2516ACTA-7A | 256M; 133MHz SDRAM | distributor | TSOP | 54 | 0°C | 70°C | 559 K |
EDS2516APTA-75 | 512M; 133MHz SDRAM | distributor | TSOP | 54 | 0°C | 70°C | 546 K |
EDS2516APTA-75L | 512M; 133MHz SDRAM | distributor | TSOP | 54 | 0°C | 70°C | 546 K |
EDS2516APTA-7A | 512M; 133MHz SDRAM | distributor | TSOP | 54 | 0°C | 70°C | 546 K |
HSH2510NILO | Lamp for photolithography. Power 2500 watts, current 109 amps(DC), voltage 23 volts(DC). Temperature(at base) 220degC(max). | distributor | - | 2 | - | - | 42 K |
TN2510N8 | 40V N-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 478 K |
TN2510ND | 40V N-channel enhancement-mode vertical DMOS FET | distributor | Die | 3 | -55°C | 150°C | 478 K |
TP2510N8 | 100V P-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 456 K |
TP2510ND | 100V P-channel enhancement-mode vertical DMOS FET | distributor | Die | 3 | -55°C | 150°C | 456 K |
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