| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| KM416C254DTL-6 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh | Samsung-Electronic | TSOP II | 40 | 0°C | 70°C | 840 K |
| KM416C254DTL-7 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh | Samsung-Electronic | TSOP II | 40 | 0°C | 70°C | 840 K |
| MBR2540CT | 40V, 30A schottky barrier rectifier | distributor | - | 3 | -55°C | 150°C | 42 K |
| MBR2545CT | 45V, 30A schottky barrier rectifier | distributor | - | 3 | -55°C | 150°C | 42 K |
| MMBZ5254BW | Surface mount silicon zener diode. Nominal zener voltage Vz = 27 V @ Izt. 200 mWatts zener diode. | distributor | - | 3 | -55°C | 150°C | 79 K |
| MMSZ5254B | Surface mount silicon zener diode. Nominal zener voltage Vz = 27 V @ Izt. 500 mWatts zener diode. | distributor | - | 2 | -55°C | 150°C | 82 K |
| MMSZ5254BS | Surface mount silicon zener diode. Nominal zener voltage Vz = 27 V @ Izt. 200 mWatts zener diode. | distributor | - | 2 | -55°C | 150°C | 78 K |
| MMSZ5254BS | Surface mount silicon zener diode. Nominal zener voltage Vz = 27 V @ Izt. 200 mWatts zener diode. | distributor | - | 2 | -55°C | 150°C | 78 K |
| SB2540CT | Schottky barrier rectifier. Max recurrent peak reverse voltage 40 V. Max average forward rectified current at Tc = 90degC 25 A. | distributor | - | 3 | -50°C | 125°C | 39 K |
| SB2540FCT | Isolation Schottky barrier rectifier. Max recurrent peak reverse voltage 40.0 V. Max average forward rectified current at Tc = 90degC 25 A. | distributor | - | 3 | -50°C | 125°C | 46 K |
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