| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| M5M5256DFP-45XL | 262144-bit (32768-word by 8-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | SOP | 28 | 0°C | 70°C | 63 K |
| M5M5256DP-45LL | 262144-bit (32768-word by 8-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | DIP | 28 | 0°C | 70°C | 63 K |
| M5M5256DP-45XL | 262144-bit (32768-word by 8-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | DIP | 28 | 0°C | 70°C | 63 K |
| M5M5256DP-55LL | 262144-bit (32768-word by 8-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | DIP | 28 | 0°C | 70°C | 63 K |
| M5M5256DP-55XL | 262144-bit (32768-word by 8-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | DIP | 28 | 0°C | 70°C | 63 K |
| M5M5256DP-70LL | 262144-bit (32768-word by 8-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | DIP | 28 | 0°C | 70°C | 63 K |
| M5M5256DP-70XL | 262144-bit (32768-word by 8-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | DIP | 28 | 0°C | 70°C | 63 K |
| MAX4256ESA | Single, single-supply operation +2.4V to 5.5V, low-noise, low-distortion, Rail-to-Rail op amp. Gain bandwidth 22MHz, min stable gain 10V/V, with shutdown. | Maxim-Integrated-Producs | SO | 9 | -40°C | 85°C | 238 K |
| MAX4256EUA | Single, single-supply operation +2.4V to 5.5V, low-noise, low-distortion, Rail-to-Rail op amp. Gain bandwidth 22MHz, min stable gain 10V/V, with shutdown. | Maxim-Integrated-Producs | microMAX | 8 | -40°C | 85°C | 238 K |
| TNY256Y | Energy efficient, low power off-line switcher | distributor | - | 7 | -40°C | 150°C | 509 K |
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