| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| M4-256/128-10AC | High-performance E2CMOS in-system programmable logic, 5V Vcc, 256 macrocells, 128 I/Os, 10ns | Lattice-Semiconductor-Corporation | BGA | 256 | 0°C | 70°C | 720 K |
| M4-256/128-12AC | High-performance E2CMOS in-system programmable logic, 5V Vcc, 256 macrocells, 128 I/Os, 12ns | Lattice-Semiconductor-Corporation | BGA | 256 | 0°C | 70°C | 720 K |
| M4LV-256/128-10AC | High-performance E2CMOS in-system programmable logic, 3.3V Vcc, 256 macrocells, 128 I/Os, 10ns | Lattice-Semiconductor-Corporation | BGA | 256 | 0°C | 70°C | 720 K |
| M4LV-256/128-12AC | High-performance E2CMOS in-system programmable logic, 3.3V Vcc, 256 macrocells, 128 I/Os, 12ns | Lattice-Semiconductor-Corporation | BGA | 256 | 0°C | 70°C | 720 K |
| M4LV-256/128-7AC | High-performance E2CMOS in-system programmable logic, 3.3V Vcc, 256 macrocells, 128 I/Os, 7ns | Lattice-Semiconductor-Corporation | BGA | 256 | 0°C | 70°C | 720 K |
| MMBZ5256BW | Surface mount silicon zener diode. Nominal zener voltage Vz = 30 V @ Izt. 200 mWatts zener diode. | distributor | - | 3 | -55°C | 150°C | 79 K |
| MMSZ5256B | Surface mount silicon zener diode. Nominal zener voltage Vz = 30 V @ Izt. 500 mWatts zener diode. | distributor | - | 2 | -55°C | 150°C | 82 K |
| MMSZ5256BS | Surface mount silicon zener diode. Nominal zener voltage Vz = 30 V @ Izt. 200 mWatts zener diode. | distributor | - | 2 | -55°C | 150°C | 78 K |
| SB2560FCT | Isolation Schottky barrier rectifier. Max recurrent peak reverse voltage 60.0 V. Max average forward rectified current at Tc = 90degC 25 A. | distributor | - | 3 | -50°C | 125°C | 46 K |
| SB2560FCT | Isolation Schottky barrier rectifier. Max recurrent peak reverse voltage 60.0 V. Max average forward rectified current at Tc = 90degC 25 A. | distributor | - | 3 | -50°C | 125°C | 46 K |
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