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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
1N5256A30 V, 4.2 mA, zener diodedistributorDO2--47 K
LP62S16256FU-55LLI55ns; operating current:40mA; standby current:10uA; 256K x 16bit low voltage CMOS SRAMdistributorCSP440°C70°C168 K
LP62S16256FU-55LLT55ns; operating current:40mA; standby current:10uA; 256K x 16bit low voltage CMOS SRAMdistributorCSP480°C70°C168 K
LP62S16256FU-70LLI70ns; operating current:40mA; standby current:10uA; 256K x 16bit low voltage CMOS SRAMdistributorCSP440°C70°C168 K
LP62S16256FU-70LLT70ns; operating current:40mA; standby current:10uA; 256K x 16bit low voltage CMOS SRAMdistributorCSP480°C70°C168 K
LP62S16256FV-55LLT55ns; operating current:40mA; standby current:10uA; 256K x 16bit low voltage CMOS SRAMdistributorTSOP440°C70°C168 K
LP62S16256FV-70LLI70ns; operating current:40mA; standby current:10uA; 256K x 16bit low voltage CMOS SRAMdistributorTSOP440°C70°C168 K
LP62S16256FV-70LLT70ns; operating current:40mA; standby current:10uA; 256K x 16bit low voltage CMOS SRAMdistributorTSOP440°C70°C168 K
MB256WSingle phase bridge rectifier. Maximum recurrent peak reverse voltage 600 V. Maximum average forward rectified current 25 A.distributor-4-65°C125°C150 K
MMBZ5256BSurface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 30.0 V. Test current 4.2 mA.distributor-3--21 K
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