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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
1N5256B30; 500mW epitaxial zener diodedistributor-2-65°C200°C34 K
28LV256TM-3Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.distributorTSOP28-55°C125°C41 K
28LV256TM-4Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.distributorTSOP28-55°C125°C41 K
28LV256TM-5Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.distributorTSOP28-55°C125°C41 K
28LV256TM-6Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.distributorTSOP28-55°C125°C41 K
MMBZ5256B30V; 350mW surface mount zener diode. General purpose; Ideally suited for automated assembly processesdistributor-3-65°C150°C66 K
MMBZ5256BT30V; 150mW surface mount zner diode. Ideal for aotomated assemblydistributor-3-65°C150°C65 K
MMBZ5256BTS30V; 200mW triple surface mount zener diode array. Ideally suited for automated assemblydistributor-6-65°C150°C62 K
MMSZ5256B30V; 500mW surface mount zener diode. General purpose; Ideally suited for automated assembly processesdistributor-2-65°C150°C61 K
ZMM5256B30V; 500mW power dissipation surface mount zener diodedistributorMiniMELF--65°C175°C80 K
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