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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
1N5256A30 V, 4.2 mA, zener diodedistributorDO2--47 K
28C256APC-1High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns.distributorPDIP280°C70°C41 K
BF256ATransistor polarity N Channel Gfs min 4.5 mA/V Current Idss max 7 mA Current Idss min 3 mA Current Ig 10 mA Application code HFA Power Ptot 300 mW Voltage Vgs off max 7.5 VFairchild-Semiconductor----120 K
BF256ATransistor polarity N Channel Gfs min 4.5 mA/V Current Idss max 7 mA Current Idss min 3 mA Current Ig 10 mA Application code HFA Power Ptot 300 mW Voltage Vgs off max 7.5 VFairchild-Semiconductor----120 K
HY62256ALJ-I-5532Kx8bit CMOS SRAM, standby current=100uA, 55nsdistributorSOP28-40°C85°C820 K
HY62256ALLJ-7032Kx8bit CMOS SRAM, standby current=25uA, 70nsdistributorSOP280°C70°C820 K
HY62256ALLR1-8532Kx8bit CMOS SRAM, standby current=25uA, 85nsdistributorTSOP I280°C70°C820 K
HY62256ALR1-8532Kx8bit CMOS SRAM, standby current=100uA, 85nsdistributorTSOP I280°C70°C820 K
HY62256AP-I-5532Kx8bit CMOS SRAM, standby current=1mA, 55nsdistributorPDIP28-40°C85°C820 K
HY62256AP-I-7032Kx8bit CMOS SRAM, standby current=1mA, 70nsdistributorPDIP28-40°C85°C820 K
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