Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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ISPLSI3256A-50LM | In-system programmable high density PLD, 128 I/O pins, 11000 PLD gates, 384 registers, 57MHz | Lattice-Semiconductor-Corporation | MQFP | 160 | 0°C | 70°C | 163 K |
ISPLSI3256A-50LMI | In-system programmable high density PLD, 128 I/O pins, 11000 PLD gates, 384 registers, 57MHz | Lattice-Semiconductor-Corporation | MQFP | 160 | -40°C | 85°C | 163 K |
ISPLSI3256A-70LQI | In-system programmable high density PLD, 128 I/O pins, 11000 PLD gates, 384 registers, 77MHz | Lattice-Semiconductor-Corporation | PQFP | 160 | -40°C | 85°C | 163 K |
ISPLSI3256A-90LM | In-system programmable high density PLD, 128 I/O pins, 11000 PLD gates, 384 registers, 90MHz | Lattice-Semiconductor-Corporation | MQFP | 160 | 0°C | 70°C | 163 K |
KM41256AJ-10 | 256K x 1-bit DRAM, 100ns | Samsung-Electronic | LDCC | 18 | 0°C | 70°C | 988 K |
KM41256AZ-10 | 256K x 1-bit DRAM, 100ns | Samsung-Electronic | ZIP | 16 | 0°C | 70°C | 988 K |
KM41256AZ-12 | 256K x 1-bit DRAM, 120ns | Samsung-Electronic | ZIP | 16 | 0°C | 70°C | 988 K |
KM41256AZ-15 | 256K x 1-bit DRAM, 150ns | Samsung-Electronic | ZIP | 16 | 0°C | 70°C | 988 K |
LC863256A | 8-Bit Single Chip Microcontroller | SANYO-Electric-Co--Ltd- | - | - | - | - | 656 K |
LC877256A | 8-Bit Single Chip Microcontroller with 64/56/48 KB ROM and 2048-Byte RAM On Chip | SANYO-Electric-Co--Ltd- | - | - | - | - | 707 K |
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