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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
D2570H55Wavelengh-selected direct modulated isolated DFB laser module. ST ferrule. ITU freq. 195.5 THz. Center wavelength 1533.47 nm. Peak power 10mW. Dispersion performance 1800ps/nm(100km).distributorMetal/ceramic butter14-40°C70°C112 K
D2570H56Wavelengh-selected direct modulated isolated DFB laser module. ST ferrule. ITU freq. 195.6 THz. Center wavelength 1532.68 nm. Peak power 10mW. Dispersion performance 1800ps/nm(100km).distributorMetal/ceramic butter14-40°C70°C112 K
D2570H57Wavelengh-selected direct modulated isolated DFB laser module. ST ferrule. ITU freq. 195.7 THz. Center wavelength 1531.90 nm. Peak power 10mW. Dispersion performance 1800ps/nm(100km).distributorMetal/ceramic butter14-40°C70°C112 K
D2570H58Wavelengh-selected direct modulated isolated DFB laser module. ST ferrule. ITU freq. 195.8 THz. Center wavelength 1531.12 nm. Peak power 10mW. Dispersion performance 1800ps/nm(100km).distributorMetal/ceramic butter14-40°C70°C112 K
D2570H59Wavelengh-selected direct modulated isolated DFB laser module. ST ferrule. ITU freq. 195.9 THz. Center wavelength 1530.33 nm. Peak power 10mW. Dispersion performance 1800ps/nm(100km).distributorMetal/ceramic butter14-40°C70°C112 K
D2570H60Wavelengh-selected direct modulated isolated DFB laser module. ST ferrule. ITU freq. 196.0 THz. Center wavelength 1529.55 nm. Peak power 10mW. Dispersion performance 1800ps/nm(100km).distributorMetal/ceramic butter14-40°C70°C112 K
D2570H61Wavelengh-selected direct modulated isolated DFB laser module. ST ferrule. ITU freq. 196.1 THz. Center wavelength 1528.77 nm. Peak power 10mW. Dispersion performance 1800ps/nm(100km).distributorMetal/ceramic butter14-40°C70°C112 K
MF3257A-J8CATXX256Kb, 8/16-bit data bus compact flash cardMitsubishi-Electric-Corporation-Semiconductor-Group-680°C70°C119 K
MF3257A-J9CATXX256Kb, 8/16-bit data bus compact flash cardMitsubishi-Electric-Corporation-Semiconductor-Group-680°C70°C102 K
MF3257A-LZCATXX256Kb, 8/16-bit data bus static RAM cardMitsubishi-Electric-Corporation-Semiconductor-Group-680°C70°C116 K
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