Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2SD2579 | NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output Applications | SANYO-Electric-Co--Ltd- | - | - | - | - | 43 K |
FDB2570 | 150V N-Channel PowerTrench MOSFET | Fairchild-Semiconductor | - | - | - | - | 81 K |
FDB2572 | N-Channel UltraFET ® Trench MOSFET 150V, 29A, 54mOhm | Fairchild-Semiconductor | - | - | - | - | 269 K |
FDD2570 | 150V N-Channel PowerTrench TM MOSFET | Fairchild-Semiconductor | - | - | - | - | 99 K |
FDD2572 | N-Channel UltraFET ® Trench MOSFET 150V, 29A, 54mOhm | Fairchild-Semiconductor | - | - | - | - | 247 K |
FDP2570 | 150V N-Channel PowerTrench MOSFET | Fairchild-Semiconductor | - | - | - | - | 81 K |
FDP2570 | 150V N-Channel PowerTrench MOSFET | Fairchild-Semiconductor | - | - | - | - | 81 K |
KDV257E | VCO for UHF Band Radio | Korea-Electronics-Co--Ltd- | - | - | - | - | 63 K |
TMS4257-10NL | 262144-bit dynamic random-access memory, 100ns | Texas-Instruments | DIP | 16 | 0°C | 70°C | 1 M |
TMS4257-10NL | 262144-bit dynamic random-access memory, 100ns | Texas-Instruments | DIP | 16 | 0°C | 70°C | 1 M |
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