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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
D2587P862Wavelength-selected, high-power with locker isolated DFB laser module. ITU-T frequency 186.2 THz. Center wavelength 1610.06 nm. High optical power 20 mW, CWdistributorMetal/ceramic butter14-25°C70°C122 K
E258010 Gbits/s EML module. GPO connector RF input.distributor-13-10°C70°C637 K
EL6258CU3-channel laser diode driver and oscillator + APC amplifierdistributorQSOP240°C70°C135 K
M38258E1-FPRAM size: 1536 bytes; single-chip 8-bit CMOS microcomputerMitsubishi-Electric-Corporation-Semiconductor-GroupTQFP100-20°C85°C994 K
M38258E2-FPRAM size: 1536 bytes; single-chip 8-bit CMOS microcomputerMitsubishi-Electric-Corporation-Semiconductor-GroupTQFP100-20°C85°C994 K
M38258E3-FPRAM size: 1536 bytes; single-chip 8-bit CMOS microcomputerMitsubishi-Electric-Corporation-Semiconductor-GroupTQFP100-20°C85°C994 K
M38258E4-FPRAM size: 1536 bytes; single-chip 8-bit CMOS microcomputerMitsubishi-Electric-Corporation-Semiconductor-GroupTQFP100-20°C85°C994 K
M38258E5-FPRAM size: 1536 bytes; single-chip 8-bit CMOS microcomputerMitsubishi-Electric-Corporation-Semiconductor-GroupTQFP100-20°C85°C994 K
M38258E6-FPRAM size: 1536 bytes; single-chip 8-bit CMOS microcomputerMitsubishi-Electric-Corporation-Semiconductor-GroupTQFP100-20°C85°C994 K
MGFC39V5258A5.2-5.8 GHz band 8W internally matched GaAs FETMitsubishi-Electric-Corporation-Semiconductor-Group-3--97 K
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