| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N5258A | 36 V, 3.4 mA, zener diode | distributor | DO | 2 | - | - | 47 K |
| 30KW258A | 258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | distributor | - | 2 | -55°C | 175°C | 166 K |
| AQV258AX | PhotoMOS relay, HE (high-function economy) type [1-channel (form A) type]. I/O isolation : 1.500V AC. Output rating: load voltage 1.500 V, load current 20 mA. Surface-mount terminal, tape and reel packing style, picked from the 1/2/3-pin side. | distributor | - | 6 | -40°C | 85°C | 56 K |
| AQV258AZ | PhotoMOS relay, HE (high-function economy) type [1-channel (form A) type]. I/O isolation : 1.500V AC. Output rating: load voltage 1.500 V, load current 20 mA. Surface-mount terminal, tape and reel packing style, picked from the 4/5/6-pin side. | distributor | - | 6 | -40°C | 85°C | 56 K |
| KA258A | Dual operational amplifier | Fairchild-Semiconductor | DIP | 8 | -25°C | 85°C | 148 K |
| KA258AD | Dual operational amplifier | Fairchild-Semiconductor | SOP | 8 | -25°C | 85°C | 148 K |
| KSC2258A | NPN Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 44 K |
| MGFC39V5258A | 5.2-5.8 GHz band 8W internally matched GaAs FET | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 97 K |
| NTE5258A | 50 watt zener diode, +-5% tolerance. Nominal zener voltage Vz = 16.0V. Zener test current Izt = 780mA. | distributor | - | 2 | -65°C | 175°C | 31 K |
| NTE5258AK | 50 watt zener diode, +-5% tolerance. Nominal zener voltage Vz = 16.0V. Zener test current Izt = 780mA. | distributor | - | 2 | -65°C | 175°C | 31 K |
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