| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BTA225BseriesC | Three quadrant triacs high commutation | Philips-Semiconductors | - | - | - | - | 22 K |
| IDT54FCT825BSO | High-performance CMOS bus interface register | Integrated-Device-Technology-Inc- | SOIC | 24 | -55°C | 125°C | 186 K |
| IDT54FCT825BSOB | High-performance CMOS bus interface register | Integrated-Device-Technology-Inc- | SOIC | 24 | -55°C | 125°C | 186 K |
| IDT74FCT825BSO | High-performance CMOS bus interface register | Integrated-Device-Technology-Inc- | SOIC | 24 | 0°C | 70°C | 186 K |
| IDT74FCT825BSOB | High-performance CMOS bus interface register | Integrated-Device-Technology-Inc- | SOIC | 24 | 0°C | 70°C | 186 K |
| IDT74FCT825BSOB | High-performance CMOS bus interface register | Integrated-Device-Technology-Inc- | SOIC | 24 | 0°C | 70°C | 186 K |
| MH32V25BST-5 | 2415919104-bit (33554432-word by 72-bit) synchronous dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 135 K |
| MH32V725BST-5 | 2,415,919,104-bit (33,554,432-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 135 K |
| MH32V725BST-6 | 2,415,919,104-bit (33,554,432-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 135 K |
| VB025BSP | HIGH VOLTAGE IGNITION COIL DRIVER POWER IC | SGS-Thomson-Microelectronics | - | - | - | - | 67 K |
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