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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
CY7C199-25LMB32K x 8 static RAMCypress-SemiconductorLCC28-55°C125°C239 K
GAL16V8B-25LJHigh performance E2CMOS PLD generic array logic, 25ns, low powerLattice-Semiconductor-CorporationPLCC200°C75°C392 K
GAL20V8B-25LJIHigh performance E2CMOS PLD generic array logic, 25ns, low powerLattice-Semiconductor-CorporationPLCC28-40°C85°C308 K
GAL20V8B-25LPHigh performance E2CMOS PLD generic array logic, 25ns, low powerLattice-Semiconductor-CorporationDIP240°C75°C308 K
GAL20V8B-25LPIHigh performance E2CMOS PLD generic array logic, 25ns, low powerLattice-Semiconductor-CorporationDIP24-40°C85°C308 K
GAL22V10B-25LJIHigh Performance E2CMOS PLD, 25ns, low powerLattice-Semiconductor-CorporationPLCC28-40°C85°C386 K
GAL22V10B-25LPIHigh Performance E2CMOS PLD, 25ns, low powerLattice-Semiconductor-CorporationDIP24-40°C85°C386 K
GAL22V10D-25LJIHigh Performance E2CMOS PLD, 25ns, low powerLattice-Semiconductor-CorporationPLCC28-40°C85°C386 K
VTT3325LA.025 inche NPN phototransistor. Light current(min) 6.0 mA at H = 20 fc, Vce = 5.0 V.distributor-2-40°C100°C22 K
VTT3425LA.025 inche NPN phototransistor. Light current(min) 3.0 mA at H = 20 fc, Vce = 5.0 V.distributor-2-40°C100°C22 K
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