| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MGY25N120 | Insulated Gate Bipolar Transistor N-Channel | ON-Semiconductor | - | 3 | - | - | 153 K |
| MGY25N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel | ON-Semiconductor | - | 3 | - | - | 171 K |
| RF1S25N06SM | 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 106 K |
| RFK25N18 | 25.0A, 180V, 0.150 ohm, N-Channel Power MOSFET FN1500.3 | Intersil-Corporation | - | - | - | - | 42 K |
| RFK25N20 | 25.0A, 180V, 0.150 ohm, N-Channel Power MOSFET FN1500.3 | Intersil-Corporation | - | - | - | - | 42 K |
| RFK25N20 | 25.0A, 180V, 0.150 ohm, N-Channel Power MOSFET FN1500.3 | Intersil-Corporation | - | - | - | - | 42 K |
| RFP25N06 | 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 106 K |
| STD25NE03L | N-CHANNEL 30V - 0.019 OHM - 25A - TO-251/TO-252 STRIPFET POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 91 K |
| STP25N06 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 207 K |
| STP25N06FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 207 K |
| STY25NA60 | N-CHANNEL 600V - 0.225 OHM - 25A - MAX247 EXTREMELY LOW GATE CHARGE POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 82 K |
| [1] 2 [3] [4] [5] [6] [7] [8] [9] [10] |
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