Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IXFK25N80 | 800V HiPerFET power MOSFET | distributor | - | 4 | -55°C | 150°C | 151 K |
IXFN25N80 | 800V HiPerFET power MOSFET | distributor | - | 4 | -55°C | 150°C | 151 K |
IXGH25N100 | 1000V, 50A diode | distributor | - | 3 | -55°C | 150°C | 106 K |
IXGH25N100A | 1000V, 50A diode | distributor | - | 3 | -55°C | 150°C | 106 K |
IXGH25N100AU1 | 1000V low voltage high speed IGBT with diode | distributor | - | 3 | -55°C | 150°C | 315 K |
IXGH25N100U1 | 1000V low voltage high speed IGBT with diode | distributor | - | 3 | -55°C | 150°C | 315 K |
IXGH25N120 | 1200V high speed IGBT | distributor | - | 3 | -55°C | 150°C | 45 K |
IXGH25N120A | 1200V high speed IGBT | distributor | - | 3 | -55°C | 150°C | 45 K |
IXGM25N100 | 1000V, 50A diode | distributor | - | 4 | -55°C | 150°C | 106 K |
IXSH25N120AU1 | 1200V fast recovery epitaxial diode (FRED) | distributor | - | 3 | -55°C | 150°C | 36 K |
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