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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
EDI88512CA25N36I25ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600distributorSOJ36-40°C85°C268 K
EDI88512LPA25N36C25ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600distributorSOJ360°C70°C268 K
EDI88512LPA25N36I25ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600distributorSOJ36-40°C85°C268 K
M27C256B-25N3256 Kbit (32Kb x 8) EPROM, 5V, 250nsSGS-Thomson-MicroelectronicsTSOP28-40°C125°C107 K
M27C256B-25N3TR256 Kbit (32Kb x 8) EPROM, 5V, 250nsSGS-Thomson-MicroelectronicsTSOP28-40°C125°C107 K
M27C512-25N3512 Kbit (64Kb x 8) EPROM, 5V, 250nsSGS-Thomson-MicroelectronicsTSOP28-40°C125°C114 K
M27C512-25N3TR512 Kbit (64Kb x 8) EPROM, 5V, 250nsSGS-Thomson-MicroelectronicsTSOP28-40°C125°C114 K
SN74HC125N3 QUADRUPLE BUS BUFFER GATES WITH 3-STATE OUTPUTSTexas-InstrumentsN14-40°C85°C93 K
SN74S225N3 16 X 5 ASYNCHRONOUS FIFO MEMORYTexas-InstrumentsN200°C70°C145 K
TN5325N3400V N-channel enhancement-mode vertical DMOS FETdistributor-3-55°C150°C446 K
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