| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 5962H9652601QCA | RadHard MSI: SMD. Dual 4-input NAND gates. Class Q, QML. Lead finish solder. Total dose 1E6 rads(Si) . | distributor | Ceramic DIP | 14 | -55°C | 125°C | 10 M |
| 5962H9652601QCA | RadHard MSI: SMD. Dual 4-input NAND gates. Class Q, QML. Lead finish solder. Total dose 1E6 rads(Si) . | distributor | Ceramic DIP | 14 | -55°C | 125°C | 10 M |
| 5962H9652601QCC | RadHard MSI: SMD. Dual 4-input NAND gates. Class Q, QML. Lead finish gold. Total dose 1E6 rads(Si) . | distributor | Ceramic DIP | 14 | -55°C | 125°C | 10 M |
| 5962H9652601QCC | RadHard MSI: SMD. Dual 4-input NAND gates. Class Q, QML. Lead finish gold. Total dose 1E6 rads(Si) . | distributor | Ceramic DIP | 14 | -55°C | 125°C | 10 M |
| 5962H9652601QXA | RadHard MSI: SMD. Dual 4-input NAND gates. Class Q, QML. Lead finish solder. Total dose 1E6 rads(Si) . | distributor | Ceramic flatpack | 14 | -55°C | 125°C | 10 M |
| 5962H9652601QXA | RadHard MSI: SMD. Dual 4-input NAND gates. Class Q, QML. Lead finish solder. Total dose 1E6 rads(Si) . | distributor | Ceramic flatpack | 14 | -55°C | 125°C | 10 M |
| 5962H9652601QXC | RadHard MSI: SMD. Dual 4-input NAND gates. Class Q, QML. Lead finish gold. Total dose 1E6 rads(Si) . | distributor | Ceramic flatpack | 14 | -55°C | 125°C | 10 M |
| 5962H9652601VCX | RadHard MSI: SMD. Dual 4-input NAND gates. Class V, QML. Lead finish optional. Total dose 1E6 rads(Si) . | distributor | Ceramic DIP | 14 | -55°C | 125°C | 10 M |
| APM2607CC-TR | 30 V, P-channel enhancement mode MOSFET | distributor | - | 8 | -55°C | 150°C | 598 K |
| APM2607CC-TR | 30 V, P-channel enhancement mode MOSFET | distributor | - | 8 | -55°C | 150°C | 598 K |
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