| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SC2778 | Silicon NPN epitaxial planer type small signal transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 56 K |
| 2SD1277A | Silicon NPN triple diffusion planar type Darlington power transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 62 K |
| 2SK2778 | MOS FET | Sanken-Electric-Co- | - | - | - | - | 35 K |
| 2SK2779 | MOS FET | Sanken-Electric-Co- | - | - | - | - | 35 K |
| LNG277CKA | GaAlAs Type visible light emitting diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 30 K |
| LNG277LKR | Round Type visible light emitting diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 30 K |
| LNG277WKA | GaAlAs Type visible light emitting diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 30 K |
| UPC2776TB | IC for middle output high frequency wide band amplifier | NEC-Electronics-Inc- | - | - | - | - | 80 K |
| UPC2776TB-E3 | IC for middle output high frequency wide band amplifier | NEC-Electronics-Inc- | - | - | - | - | 80 K |
| UPC2776TB-E3 | IC for middle output high frequency wide band amplifier | NEC-Electronics-Inc- | - | - | - | - | 80 K |
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