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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
HGTG27N120BN72A, 1200V, NPT Series N-Channel IGBTIntersil-Corporation----82 K
IRFP27N60KHEXFET power MOSFET. VDSS = 600 V, RDS(on) = 180 mOhm, ID = 27 AInternational-Rectifier-3-55°C150°C91 K
MM1027NFSystem reset (with battery back-up)distributor-16-20°C70°C133 K
MM1027NVSystem reset (with battery back-up)distributor-20-20°C70°C133 K
MTP27N10ETMOS E-FET power field effect transistorMotorola-4-55°C150°C230 K
OM1327N2M1.5A three terminal, precision adjustable negative voltage regulatordistributorLCC20-55°C150°C38 K
OM1327NKM1.5A three terminal, precision adjustable negative voltage regulatordistributor-3-55°C150°C38 K
OM1327NMM1.5A three terminal, precision adjustable negative voltage regulatordistributorSMD3-55°C150°C38 K
OM1327NTM1.5A three terminal, precision adjustable negative voltage regulatordistributor-3-55°C150°C38 K
OM7627NM3.0A three terminal, adjustable voltage precision negative regulatordistributorSurface mount3-55°C150°C18 K
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