Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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HGTG27N120BN | 72A, 1200V, NPT Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 82 K |
IRFP27N60K | HEXFET power MOSFET. VDSS = 600 V, RDS(on) = 180 mOhm, ID = 27 A | International-Rectifier | - | 3 | -55°C | 150°C | 91 K |
MM1027NF | System reset (with battery back-up) | distributor | - | 16 | -20°C | 70°C | 133 K |
MM1027NV | System reset (with battery back-up) | distributor | - | 20 | -20°C | 70°C | 133 K |
MTP27N10E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 230 K |
OM1327N2M | 1.5A three terminal, precision adjustable negative voltage regulator | distributor | LCC | 20 | -55°C | 150°C | 38 K |
OM1327NKM | 1.5A three terminal, precision adjustable negative voltage regulator | distributor | - | 3 | -55°C | 150°C | 38 K |
OM1327NMM | 1.5A three terminal, precision adjustable negative voltage regulator | distributor | SMD | 3 | -55°C | 150°C | 38 K |
OM1327NTM | 1.5A three terminal, precision adjustable negative voltage regulator | distributor | - | 3 | -55°C | 150°C | 38 K |
OM7627NM | 3.0A three terminal, adjustable voltage precision negative regulator | distributor | Surface mount | 3 | -55°C | 150°C | 18 K |
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