| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IS62LV12816L-10B | 128K x 16 CMOS static RAM | distributor | BGA | 48 | 0°C | 70°C | 82 K |
| IS62LV12816LL-10B | 128K x 16 CMOS static RAM | distributor | BGA | 48 | 0°C | 70°C | 82 K |
| IS62LV12816LL-70B | 128K x 16 CMOS static RAM | distributor | BGA | 48 | 0°C | 70°C | 82 K |
| K4H281638B-TCA2 | 128 Mb DDR SDRAM. Version 1.0, 133 MHz, speed 7.5ns@CL2. | Samsung-Electronic | - | 66 | 0°C | 70°C | 669 K |
| K4S281632B-NC/L1H | 2M x 16bit x 4 banks synchronous DRAM in sTSOP. Max freq. 100 MHz (CL=2), interface LVTTL, | Samsung-Electronic | sTSOP(II) | 54 | 0°C | 70°C | 64 K |
| K4S281632B-NC/L1L | 2M x 16bit x 4 banks synchronous DRAM in sTSOP. Max freq. 100 MHz (CL=3), interface LVTTL. | Samsung-Electronic | sTSOP(II) | 54 | 0°C | 70°C | 64 K |
| K4S281632M-TC/L10 | 2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 66 MHz (CL=2&3) | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 87 K |
| K4S281632M-TC/L1H | 2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 100 MHz (CL=2) | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 87 K |
| K4S281632M-TC/L1L | 2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 100 MHz (CL=3) | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 87 K |
| K4S281632M-TC/L80 | 2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 125 MHz (CL=3) | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 87 K |
| << [39] [40] [41] [42] [43] 44 [45] [46] [47] [48] [49] >> |
|---|
