| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SC2816 | NPN transistor for high voltage, high speed and high power switching | distributor | - | 3 | -55°C | 150°C | 31 K |
| REC10-2812DRWL | 10W DC/DC converter with 28V input, +-12/+-416mA output | distributor | DIL | 6 | -25°C | 70°C | 82 K |
| REC10-2812SRWL | 10W DC/DC converter with 28V input, 12/830mA output | distributor | DIL | 6 | -25°C | 70°C | 82 K |
| REC10-2815DRWL | 10W DC/DC converter with 28V input, +-15/+-333mA output | distributor | DIL | 6 | -25°C | 70°C | 82 K |
| REC10-2815SRWL | 10W DC/DC converter with 28V input, 15/670mA output | distributor | DIL | 6 | -25°C | 70°C | 82 K |
| VTE1281-1 | GaAlAs infrared emitting diode. Irradiance(typ) 3.3 mW/cm2 (distance 36 mm, diameter 6.4 mm). | distributor | - | 2 | -40°C | 100°C | 32 K |
| VTE1281-2 | GaAlAs infrared emitting diode. Irradiance(typ) 6.5 mW/cm2 (distance 36 mm, diameter 6.4 mm). | distributor | - | 2 | -40°C | 100°C | 32 K |
| VTE1281F | GaAlAs infrared emitting diode. Irradiance(typ) 0.21 mW/cm2 (distance 36 mm, diameter 6.4 mm). | distributor | - | 2 | -40°C | 100°C | 24 K |
| VTE1281W-1 | GaAlAs infrared emitting diode. Irradiance(typ) 1.6 mW/cm2 (distance 36 mm, diameter 6.4 mm). | distributor | - | 2 | -40°C | 100°C | 32 K |
| VTE1281W-2 | GaAlAs infrared emitting diode. Irradiance(typ) 3.3 mW/cm2 (distance 36 mm, diameter 6.4 mm). | distributor | - | 2 | -40°C | 100°C | 32 K |
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