| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N2904A | NPN silicon planar epitaxial transistor | distributor | - | 3 | -65°C | 200°C | 175 K |
| 2N2904A | NPN silicon planar epitaxial transistor | distributor | - | 3 | -55°C | 150°C | 57 K |
| 2N2905 | 600mW PNP silicon planar epitaxial transistor | distributor | - | 3 | -65°C | 200°C | -- |
| 2N2905A | NPN silicon planar epitaxial transistor | distributor | - | 3 | -65°C | 200°C | 57 K |
| 2N2905A | NPN silicon planar epitaxial transistor | distributor | - | 3 | -55°C | 150°C | 57 K |
| EN27LV51290P | 512Kbit EPROM (64K x 8). Speed 90ns. Single +3.3V power supply - regulated power supply 3.0V - 3.6V | distributor | PDIP | 28 | 0°C | 70°C | 160 K |
| IRFP2907 | HEXFET power MOSFET. VDSS = 75 V, RDS(on) = 4.5 mOhm, ID = 209 A | International-Rectifier | - | 3 | -55°C | 175°C | 115 K |
| PN2904A | 500mW PNP silicon planar epitaxial transistor | distributor | - | 3 | -55°C | 150°C | 175 K |
| PN2905 | 500mW PNP silicon planar epitaxial transistor | distributor | - | 3 | -55°C | 150°C | -- |
| PN2905A | 500mW PNP silicon planar epitaxial transistor | distributor | - | 3 | -55°C | 150°C | 175 K |
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