| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| OP293A | GaAs plastic infrared emitting diode | distributor | - | 2 | -40°C | 100°C | 502 K |
| OP293B | GaAs plastic infrared emitting diode | distributor | - | 2 | -40°C | 100°C | 502 K |
| OP293C | GaAs plastic infrared emitting diode | distributor | - | 2 | -40°C | 100°C | 502 K |
| PE3293-00 | 1.8 GHz / 550 MHz dual fractional-N ultra-low spurious PLL for frequency synthesis | distributor | TSSOP | 20 | -40°C | 85°C | 257 K |
| PE3293-04 | 1.8 GHz / 550 MHz dual fractional-N ultra-low spurious PLL for frequency synthesis | distributor | BCC | 24 | -40°C | 85°C | 257 K |
| PE3293-11 | 1.8 GHz / 550 MHz dual fractional-N ultra-low spurious PLL for frequency synthesis | distributor | TSSOP | 20 | -40°C | 85°C | 257 K |
| PE3293-12 | 1.8 GHz / 550 MHz dual fractional-N ultra-low spurious PLL for frequency synthesis | distributor | TSSOP | 20 | -40°C | 85°C | 257 K |
| PE3293-14 | 1.8 GHz / 550 MHz dual fractional-N ultra-low spurious PLL for frequency synthesis | distributor | BCC | 24 | -40°C | 85°C | 257 K |
| PE3293-15 | 1.8 GHz / 550 MHz dual fractional-N ultra-low spurious PLL for frequency synthesis | distributor | BCC | 24 | -40°C | 85°C | 257 K |
| PH2931-135S | 2900-3100 MHz, 135 W,20 ms, radar pulsed power transistor | M-A-COM---manufacturer-of-RF | - | - | - | - | 150 K |
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