| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AF002C1-39 | GaAs IC control FET, DC–2.5 GHz | distributor | - | 3 | -40°C | 85°C | 43 K |
| EDI88512C100CB | 100ns; 5V power supply; 512K x 8 monolithic SRAM CMOS | distributor | DIP | 32 | - | - | 121 K |
| EDI88512C100CC | 100ns; 5V power supply; 512K x 8 monolithic SRAM CMOS | distributor | DIP | 32 | 0°C | 70°C | 121 K |
| EDI88512C100CI | 100ns; 5V power supply; 512K x 8 monolithic SRAM CMOS | distributor | DIP | 32 | -40°C | 85°C | 121 K |
| EDI88512C100CM | 100ns; 5V power supply; 512K x 8 monolithic SRAM CMOS | distributor | DIP | 32 | -55°C | 125°C | 121 K |
| EDI88512C100NB | 100ns; 5V power supply; 512K x 8 monolithic SRAM CMOS | distributor | SOJ | 32 | - | - | 121 K |
| EDI88512C100NC | 100ns; 5V power supply; 512K x 8 monolithic SRAM CMOS | distributor | SOJ | 32 | 0°C | 70°C | 121 K |
| EDI88512C100NI | 100ns; 5V power supply; 512K x 8 monolithic SRAM CMOS | distributor | SOJ | 32 | -40°C | 85°C | 121 K |
| EDI88512C100NM | 100ns; 5V power supply; 512K x 8 monolithic SRAM CMOS | distributor | SOJ | 32 | -55°C | 125°C | 121 K |
| M27C512-12C1TR | 512 Kbit (64Kb x 8) EPROM, 5V, 120ns | SGS-Thomson-Microelectronics | PLCC | 32 | 0°C | 70°C | 114 K |
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