| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MA2D749 | Silicon epitaxial planer type Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 37 K |
| MA2D755 | Silicon epitaxial planer type Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 37 K |
| MA2D760 | Silicon epitaxial planer type Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 37 K |
| MH32D72AKLA-10 | 2,415,919,104-bit synchronous DRAM module | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 184 | 0°C | 70°C | 331 K |
| MH32D72AKLA-75 | 2,415,919,104-bit synchronous DRAM module | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 184 | 0°C | 70°C | 331 K |
| MH32D72AKLB-10 | 2415919104-bit synchronous DRAM module | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 184 | 0°C | 70°C | 358 K |
| MH32D72KLH-10 | 2415919104-bit (33554432-word by 72-bit) double date rate synchronous dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 184 | 0°C | 70°C | 342 K |
| MH32D72KLH-10 | 2,415,919,104-bit synchronous DRAM module | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 184 | 0°C | 70°C | 348 K |
| MH32D72KLH-75 | 2415919104-bit (33554432-word by 72-bit) double date rate synchronous dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 184 | 0°C | 70°C | 342 K |
| MH32D72KLH-75 | 2,415,919,104-bit synchronous DRAM module | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 184 | 0°C | 70°C | 348 K |
| 1 [2] |
|---|
