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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2EZ140Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 140.0 V. Test current Izt = 3.6 mA.distributor-2-55°C150°C122 K
2EZ150Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 150.0 V. Test current Izt = 3.3 mA.distributor-2-55°C150°C122 K
2EZ160Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 160.0 V. Test current Izt = 3.1 mA.distributor-2-55°C150°C122 K
2EZ170Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 170.0 V. Test current Izt = 2.9 mA.distributor-2-55°C150°C122 K
2EZ180Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 180.0 V. Test current Izt = 2.8 mA.distributor-2-55°C150°C122 K
2EZ190Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 190.0 V. Test current Izt = 2.6 mA.distributor-2-55°C150°C122 K
2EZ190Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 190.0 V. Test current Izt = 2.6 mA.distributor-2-55°C150°C122 K
2EZ200Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 200.0 V. Test current Izt = 2.5 mA.distributor-2-55°C150°C122 K
TC55RP1102EZB1uA low dropout positive voltage regulator (output voltage: 1.1V) for battery-powered devices, cameras and portable video equipment and etc.TelCom-Semiconductor-Inc--3-40°C85°C73 K
TC55RP6002EZB1uA low dropout positive voltage regulator (output voltage: 6V) for battery-powered devices, cameras and portable video equipment and etc.TelCom-Semiconductor-Inc--3-40°C85°C73 K
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