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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
ACT-F2M32A-150F18QHigh speed 64 Megabit sector erase FLASH multichip module. Speed 150ns.distributorCQFP68-55°C125°C92 K
M38222M3-XXXFSRAM size: 384 bytes; single-chip 8-bit CMOS microcomputerMitsubishi-Electric-Corporation-Semiconductor-GroupLCC80-20°C85°C998 K
M38222M3DXXXFSRAM size: 384 bytes; single-chip 8-bit CMOS microcomputerMitsubishi-Electric-Corporation-Semiconductor-GroupLCC80-20°C85°C998 K
M38222M3HXXXFSRAM size: 384 bytes; single-chip 8-bit CMOS microcomputerMitsubishi-Electric-Corporation-Semiconductor-GroupLCC80-20°C85°C998 K
M38222M3HXXXHPRAM size: 384 bytes; single-chip 8-bit CMOS microcomputerMitsubishi-Electric-Corporation-Semiconductor-GroupQFP80-20°C85°C998 K
M38222M3MXXXFSRAM size: 384 bytes; single-chip 8-bit CMOS microcomputerMitsubishi-Electric-Corporation-Semiconductor-GroupLCC80-20°C85°C998 K
M38222M3MXXXHPRAM size: 384 bytes; single-chip 8-bit CMOS microcomputerMitsubishi-Electric-Corporation-Semiconductor-GroupQFP80-20°C85°C998 K
MH2M365CXJ-575497472-bit (2097152-word by 36-bit) dynamic DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupSOJ720°C70°C226 K
MH2M365CXJ-675497472-bit (2097152-word by 36-bit) dynamic DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupSOJ720°C70°C226 K
MH2M365CXJ-775497472-bit (2097152-word by 36-bit) dynamic DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupSOJ720°C70°C226 K
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