| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HGT1S2N120CNDS | 13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes | Intersil-Corporation | - | - | - | - | 92 K |
| HGTD2N120BNS | 12A, 1200V, NPT Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 85 K |
| HGTD2N120BNS | 12A, 1200V, NPT Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 85 K |
| HGTD2N120CNS | 13A, 1200V, NPT Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 89 K |
| HGTP2N120BN | 12A, 1200V, NPT Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 85 K |
| HGTP2N120CN | 13A, 1200V, NPT Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 89 K |
| HGTP2N120CND | 13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes | Intersil-Corporation | - | - | - | - | 92 K |
| MGW12N120 | Insulated Gate Bipolar Transistor N-Channel | ON-Semiconductor | - | 3 | - | - | 136 K |
| MGW12N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel | ON-Semiconductor | - | 3 | - | - | 168 K |
| RFP2N12 | 2.0A, 120V and 150V, 1.750 ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 35 K |
| RFP2N12L | 2A, 120V, 1.750 Ohm, Logic Level, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 35 K |
| 1 [2] [3] [4] |
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