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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
HGT1S2N120CNDS13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast DiodesIntersil-Corporation----92 K
HGTD2N120BNS12A, 1200V, NPT Series N-Channel IGBTIntersil-Corporation----85 K
HGTD2N120BNS12A, 1200V, NPT Series N-Channel IGBTIntersil-Corporation----85 K
HGTD2N120CNS13A, 1200V, NPT Series N-Channel IGBTIntersil-Corporation----89 K
HGTP2N120BN12A, 1200V, NPT Series N-Channel IGBTIntersil-Corporation----85 K
HGTP2N120CN13A, 1200V, NPT Series N-Channel IGBTIntersil-Corporation----89 K
HGTP2N120CND13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast DiodesIntersil-Corporation----92 K
MGW12N120Insulated Gate Bipolar Transistor N-ChannelON-Semiconductor-3--136 K
MGW12N120DInsulated Gate Bipolar Transistor with Anti-Parallel Diode N-ChannelON-Semiconductor-3--168 K
RFP2N122.0A, 120V and 150V, 1.750 ohm, N-Channel Power MOSFETIntersil-Corporation----35 K
RFP2N12L2A, 120V, 1.750 Ohm, Logic Level, N-Channel Power MOSFETIntersil-Corporation----35 K
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