| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FM27C512N120 | 512K-Bit (64K x 8) High Performance CMOS EPROM | Fairchild-Semiconductor | MDIP | 28 | - | - | 100 K |
| HGT1S2N120BNDS | 12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 87 K |
| HGT1S2N120BNS | 12A, 1200V, NPT Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 85 K |
| HGTD2N120BNS | 12A, 1200V, NPT Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 85 K |
| HGTD2N120BNS | 12A, 1200V, NPT Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 85 K |
| HGTP2N120BND | 12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 87 K |
| MGV12N120D | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 79 K |
| MGW12N120 | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 228 K |
| MGW12N120D | Insulated gate bipolar transistor with anti-parallel diode | Motorola | - | 3 | -55°C | 150°C | 250 K |
| NM27C512N120 | 524,288-Bit (64K x 8) High Performance CMOS EPROM | Fairchild-Semiconductor | MDIP | 28 | - | - | 105 K |
| R3112N12A-TR | Low voltage detector with output delay. Output voltage 1.2V. Output type Nch open drain. Standard taping type TR. | distributor | - | 5 | -40°C | 85°C | 267 K |
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