Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2N3053 | Silicon planar epitaxial transistor | distributor | - | 3 | -65°C | 200°C | 203 K |
2N3053 | Silicon planar epitaxial transistor | distributor | - | 3 | -65°C | 200°C | 203 K |
2N3055 | NPN silicon power transistor. 15Amp, 60V, 115Watt. These devices are designed for general purpose switching and amplifier applications. | distributor | - | 3 | -65°C | 200°C | 48 K |
2N3055 | High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W. | distributor | - | 3 | -65°C | 200°C | 48 K |
2N3055A | 60V Complementary silicon power transistor | distributor | - | 2 | -65°C | 200°C | 200 K |
2N3055H | NPN silicon power transistor. 15Amp, 100V, 115Watt. These devices are designed for general purpose switching and amplifier applications. | distributor | - | 3 | -65°C | 200°C | 48 K |
2N3057 | Silicon planar epitaxial transistor | distributor | - | 3 | -65°C | 200°C | 203 K |
2N3057 | Silicon planar epitaxial transistor | distributor | - | 3 | -65°C | 200°C | 203 K |
2N3057 | Chip: geometry 4500; polarity PNP | distributor | - | - | - | - | 31 K |
2N3057A | Chip: geometry 4500; polarity PNP | distributor | - | - | - | - | 31 K |
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