| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N3819 | Transistor polarity N Channel Gfs min 2 mA/V Gfs max 6.5 mA/V Current Idss max 20 mA Current Idss min 2 mA Current Ig 10 mA Application code GPA Power Ptot 200 mW | Fairchild-Semiconductor | - | - | - | - | 196 K |
| 2N3822 | N-Channel silicon junction field-effect transistor | distributor | - | 4 | - | - | 94 K |
| 2N3823 | N-Channel silicon junction field-effect transistor | distributor | - | 4 | - | - | 94 K |
| 2N3823 | 300mW N-channel junction field effect transistor | distributor | - | 3 | -65°C | 175°C | 237 K |
| 2N3824 | N-Channel silicon junction field-effect transistor | distributor | - | 4 | - | - | 94 K |
| 2N3884 | 1200V, 175A phase control single thyristor | distributor | - | - | - | - | 653 K |
| 2N3885 | 1200V, 175A phase control single thyristor | distributor | - | - | - | - | 653 K |
| 2N3886 | 1200V, 175A phase control single thyristor | distributor | - | - | - | - | 653 K |
| 2N3887 | 1200V, 175A phase control single thyristor | distributor | - | - | - | - | 653 K |
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