| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N4123 | 200mW NPN silicon planar epixial transistor | distributor | - | 3 | - | - | 85 K |
| 2N4123 | General purpose transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 40V. Collector dissipation: Pc(max) = 625mW. | distributor | - | 3 | 0°C | 150°C | 45 K |
| 2N4124 | 200mW NPN silicon planar epixial transistor | distributor | - | 3 | - | - | 85 K |
| 2N4124 | 25 V, NPN small signal transistor | distributor | - | 3 | -65°C | 150°C | 124 K |
| 2N4124 | General purpose transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. | distributor | - | 3 | 0°C | 150°C | 45 K |
| 2N4125 | Amplifier transistor. Collector-emitter voltage: Vceo = -30V. Collector-base voltage: Vcbo = -30V. Collector dissipation: Pc(max) = 625mW. | distributor | - | 3 | 0°C | 150°C | 45 K |
| 2N4126 | 25 V, PNP small signal transistor | distributor | - | 3 | -65°C | 150°C | 126 K |
| 2N4126 | Amplifier transistor. Collector-emitter voltage: Vceo = -25V. Collector-base voltage: Vcbo = -25V. Collector dissipation: Pc(max) = 625mW. | distributor | - | 3 | 0°C | 150°C | 45 K |
| H2N4124 | 200mA NPN epitaxial planar transistor for purpose switching and amplifier applications | distributor | - | 3 | - | - | 34 K |
| H2N4126 | 200mA PNP epitaxial planar transistor for general purpose switching and amplifier applications | distributor | - | 3 | - | - | 36 K |
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