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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2N4400General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW.distributor-30°C150°C73 K
2N4401General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW.distributor-30°C150°C73 K
2N4402General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = 625mW.distributor-30°C150°C79 K
2N4403500mW PNP silicon planar epitaxial transistordistributor-3-55°C150°C189 K
2N441630 V, N-Channel JFET high frequency amplifierCalogic-LLC-4-55°C135°C23 K
2N4416500mW N-cnhannel FETdistributor-3-65°C200°C140 K
2N4416A30 V, N-Channel JFET high frequency amplifierCalogic-LLC-4-55°C135°C23 K
2N4416A500mW N-cnhannel FETdistributor-3-65°C200°C140 K
2N4427ft min 500 MHz hfe min 10 Transistor polarity NPN Current Ic continuous max 0.5 A Voltage Vcbo 40 V Voltage Vceo 20 V Current Ic (hfe) 100 mA Power Ptot 3.5 WSGS-Thomson-Microelectronics----132 K
X2N441630 V, N-Channel JFET high frequency amplifierCalogic-LLCSMD4-55°C135°C23 K
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