Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2N4401 | Vce=1.0V transistor | distributor | - | - | - | - | 80 K |
2N4403 | Vce=1.0V transistor | distributor | - | - | - | - | 85 K |
2N4403 | General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = 625mW. | distributor | - | 3 | 0°C | 150°C | 79 K |
2N4449 | Chip: geometry 0005; polarity NPN | distributor | - | - | - | - | 30 K |
H2N4401 | 600mA NPN epitaxial planar transistor for general purpose switching and amplifier applications | distributor | - | 3 | - | - | 40 K |
H2N4403 | 600mA PNP epitaxial planar transistor for general purpose switching and amplifier applications | distributor | - | 3 | - | - | 40 K |
HN/2N4400 | 60 V, NPN silicon expitaxial transistor | distributor | - | 3 | - | - | 209 K |
HN/2N4401 | 60 V, NPN silicon expitaxial transistor | distributor | - | 3 | - | - | 209 K |
HN/2N4402 | 40 V, PNP silicon expitaxial transistor | distributor | - | 3 | - | - | 209 K |
HN/2N4403 | 40 V, PNP silicon expitaxial transistor | distributor | - | 3 | - | - | 209 K |
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