Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2N5002 | Chip: geometry 9202; polarity NPN | distributor | - | - | - | - | 32 K |
2N5004 | Chip: geometry 9202; polarity NPN | distributor | - | - | - | - | 32 K |
2N5064 | Sensitivities thyristor, 0.8 ampere, 200 volt | distributor | - | 3 | -40°C | 125°C | 198 K |
2N5086 | Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. | distributor | - | 3 | 0°C | 150°C | 76 K |
2N5087 | Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. | distributor | - | 3 | 0°C | 150°C | 76 K |
2N5088 | Amplifier transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 35V. Collector dissipation: Pc(max) = 625mW. | distributor | - | 3 | 0°C | 150°C | 45 K |
2N5089 | Amplifier transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. | distributor | - | 3 | 0°C | 150°C | 80 K |
IXFH12N50F | 500V HiPerRF power MOSFET | distributor | - | 3 | -55°C | 150°C | 303 K |
IXFT12N50F | 500V HiPerRF power MOSFET | distributor | - | 3 | -55°C | 150°C | 303 K |
IXTP02N50D | 500V high voltage MOSFET | distributor | - | 3 | -55°C | 150°C | 54 K |
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