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2N6 datasheet. Datasheets search system |
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| Example: max232 |
| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|---|---|---|---|---|---|---|
| 2N6255 | RF NPN Transistor | Microsemi-Corporation | - | - | - | - | 231 K |
| 2N6303 | PNP Transistor | Microsemi-Corporation | - | - | - | - | 56 K |
| 2N6304 | RF NPN Transistor | Microsemi-Corporation | - | - | - | - | 86 K |
| 2N6439 | NPN silicon RF power transistor | Motorola | Issue D | - | - | - | 127 K |
| JANTX2N6849 | HEXFET power mosfet | International-Rectifier | - | 3 | -55°C | 150°C | 236 K |
| JANTX2N6851 | HEXFET power mosfet | International-Rectifier | - | 3 | -55°C | 150°C | 282 K |
| JANTX2N6851 | HEXFET power mosfet | International-Rectifier | - | 3 | -55°C | 150°C | 282 K |
| JANTXV2N6849 | HEXFET power mosfet | International-Rectifier | - | 3 | -55°C | 150°C | 236 K |
| JANTXV2N6851 | HEXFET power mosfet | International-Rectifier | - | 3 | -55°C | 150°C | 282 K |
| MTP2N60E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 219 K |
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