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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2N626180V Vce, 4A Ic, 20MHz NPN bipolar transistorSemelab-Plc-TO66---18 K
2N665960V Vdss N-Channel FET (field effect transistor)Semelab-Plc-TO39---18 K
2N666190V Vdss N-Channel FET (field effect transistor)Semelab-Plc-TO39---17 K
2N6782100V Vdss N-Channel FET (field effect transistor)Semelab-Plc-TO39---23 K
2N6782LCC4100V Vdss N-Channel FET (field effect transistor)Semelab-Plc-LCC4---21 K
2N6794500V Vdss N-Channel FET (field effect transistor)Semelab-Plc-TO39---23 K
2N6796100V Vdss N-Channel FET (field effect transistor)Semelab-Plc-TO39---18 K
2N6796LCC4100V Vdss N-Channel FET (field effect transistor)Semelab-Plc-LCC4---19 K
2N6798200V Vdss N-Channel FET (field effect transistor)Semelab-Plc-TO39---21 K
MTB2N60ETMOS E-FET high energy power FETMotorolaDPAK4-55°C150°C271 K
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