Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2N6261 | 80V Vce, 4A Ic, 20MHz NPN bipolar transistor | Semelab-Plc- | TO66 | - | - | - | 18 K |
2N6659 | 60V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO39 | - | - | - | 18 K |
2N6661 | 90V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO39 | - | - | - | 17 K |
2N6782 | 100V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO39 | - | - | - | 23 K |
2N6782LCC4 | 100V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | LCC4 | - | - | - | 21 K |
2N6794 | 500V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO39 | - | - | - | 23 K |
2N6796 | 100V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO39 | - | - | - | 18 K |
2N6796LCC4 | 100V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | LCC4 | - | - | - | 19 K |
2N6798 | 200V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO39 | - | - | - | 21 K |
MTB2N60E | TMOS E-FET high energy power FET | Motorola | DPAK | 4 | -55°C | 150°C | 271 K |
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