| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N6547 | Transistor polarity NPN Voltage Vce sat max 5 V Voltage Vceo 400 V Current Ic @ Vce sat 15 A Time fall @ Ic 0.7 ?s Current Ic av. 15 A Power Ptot 175 W Voltage Vces 850 V | SGS-Thomson-Microelectronics | - | - | - | - | 78 K |
| 2N6660 | 60V N-channel enhancement - Mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 21 K |
| 2N6661 | 90V N-channel enhancement - Mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 21 K |
| GMG112N60SF | 1200 V single-phase rectifier bridge | distributor | - | - | - | - | 159 K |
| GMG112N60SS | 1200 V single-phase rectifier bridge | distributor | - | - | - | - | 159 K |
| HGTG12N60C3D | TRANSISTOR IGBT TO-247 | Fairchild-Semiconductor | - | - | - | - | 102 K |
| HGTP12N60C3 | TRANSISTOR IGBT TO-220 | Fairchild-Semiconductor | - | - | - | - | 131 K |
| IXGA12N60B | 600V HiPerFAST IGBT | distributor | - | 3 | -55°C | 150°C | 71 K |
| IXGP12N60B | 600V HiPerFAST IGBT | distributor | - | 3 | -55°C | 150°C | 71 K |
| IXGT32N60BD1 | 600V HiPerFAST IGBT with diode | distributor | - | 3 | -55°C | 150°C | 69 K |
| << [40] [41] [42] [43] [44] 45 [46] [47] [48] [49] [50] >> |
|---|
